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PDF SMG2321P Data sheet ( Hoja de datos )
| Número de pieza | SMG2321P | |
| Descripción | P-Channel MosFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SMG2321P
-4.1A , -20V , RDS(ON) 79 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize
high cell density process. Low RDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Miniature SC-59 surface mount package saves
board space.
Fast switching speed.
High performance trench technology.
Low gate charge 7.2Nc.
APPLICATION
DC-DC converters, power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t≦5 sec
Steady-State
RθJA
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Ratings
-20
±8
-4.1
-3.3
±10
±0.46
1.25
0.8
-55 ~ 150
100
150
Unit
V
V
A
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMG2321P.PDF ] | |
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