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PDF SMG2314N Data sheet ( Hoja de datos )
| Número de pieza | SMG2314N | |
| Descripción | N-Channel MosFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SMG2314N
5.3A , 20V , RDS(ON) 32 m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
RDS(ON) and to ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low gate charge
Fast switch
Miniature SC-59 surface mount package saves
board space.
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
1.00
Max.
3.10
3.00
1.70
1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 1
ID @ TA=25°C
ID @ TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
PD @ TA=25°C
PD @ TA=70°C
Operating Junction and Storage Temperature Range
VGS
ID
IDM
IS
PD
TJ, TSTG
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t ≦ 5 sec
Steady State
RJA
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Ratings
20
±12
5.3
4.3
±20
1.6
1.3
0.8
-55~150
100
166
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
8-Aug-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMG2314N.PDF ] | |
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