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PDF SMG2314NE Data sheet ( Hoja de datos )

Número de pieza SMG2314NE
Descripción N-Channel MosFET
Fabricantes SeCoS 
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No Preview Available ! SMG2314NE Hoja de datos, Descripción, Manual

Elektronische Bauelemente
SMG2314NE
5.3 A, 20 V, RDS(ON) 32 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell
Density process. Low RDS(on) assures minimal power loss and
conserves energy, making this device ideal for use in power
management circuitry. Typical applications are PWMDC-DC
converters, power management in portable and battery-powered
products such as computers, printers, battery charger,
telecommunication power system, and telephones power system.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Miniature SC-59 surface mount package saves
board space.
High power and current handling capability.
MLow side high current DC-DC Converter applications
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
1.00
Max.
3.10
3.00
1.70
1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7’ inch
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
20
±12
5.3
4.1
20
1.8
1.3
0.8
-55 ~ 150
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient 1
t 10 sec
Steady State
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
RJA
100
166
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. B
Any changes of specification will not be informed individually.
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