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PDF SMG2310A Data sheet ( Hoja de datos )
| Número de pieza | SMG2310A | |
| Descripción | N-Channel MosFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SMG2310A
N-Ch Enhancement Mode Power MOSFET
5.0 A, 60 V, RDS(ON)=115 mΩ
sRoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMG2310A utilized advanced processing techniques to achieve the
lowest possible on-resistance, extremely efficient and cost-effectiveness
device. The SMG2310A is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement,
Small Package Outline
Super High Density Cell Design for Extremely Low RDS(ON)
MARKING CODE
3
D
N-Channel Drain
3
SC-59
A
L
3
Top View
CB
12
KE
3
1
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
2310A
12
GS
1
Gate
2
Source
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction & Storage Temperature Range
Thermal Resistance Junction-ambient3
Max
SYMBOL
VDS
VGS
ID @TA=25°C
ID @TA=70°C
IDM
PD @TA=25°C
TJ, TSTG
THERMAL DATA
RθJA
RATINGS
60
±20
5.0
4.0
10
1.38
0.01
-55 ~ +150
90
UNIT
V
V
A
A
A
W
W/°C
°C
°C /W
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25°C)
Drain-Source Leakage Current(Tj=55°C)
Static Drain-Source On-Resistance
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS 60 -
VGS(th) 0.5 -
gfs - 12
IGSS
--
IDSS
--
--
RDS(ON)
-
-
-
-
Qg - 4.0
Qgs - 1.2
Qgd - 1.0
Td(on)
Tr
Td(off)
-6
- 12
- 18
Tf - 10
Ciss - 320
Coss
- 42
Crss - 20
SOURCE-DRAIN DIODE
-
1.5
-
±100
1
10
115
125
-
-
-
-
-
-
-
-
-
-
V VGS = 0, ID = 250µA
V VDS = VGS, ID = 250µA
S VDS = 15V, ID = 4A
nA VGS = ±20V
µA VDS = 60V, VGS = 0
µA VDS = 60V, VGS = 0
mΩ
VGS = 10 V, ID = 5.0 A
VGS = 4.5 V, ID = 4.5 A
ID = 4A
nC VDS = 30V
VGS = 4.5V
VDD = 30V RG= 6Ω
ns ID = 2.5A, VGS = 10 V
RL =12Ω
VGS = 0 V
pF VDS = 30V
f = 1.0MHz
Forward On Voltage2
VSD - - 1.2 V IS = 2.5 A, VGS = 0V
Notes:
1. Pulse width limited by Max. Junction Temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on M in. copper pad.
24-Nov-2009 Rev. A
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SMG2310A.PDF ] | |
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