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PDF SMG2310 Data sheet ( Hoja de datos )
| Número de pieza | SMG2310 | |
| Descripción | N-Channel MosFET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SMG2310 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Elektronische Bauelemente
SMG2310
3A, 60V,RDS(ON) 90m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SMG2310 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SC-59 package is universally used for all
commercial-industrial applications
Features
* Simple drive requirement
* Small package outline
Applications
* Power management in Notebook Computer
* Portable equipment
* Battery powered system
A
L
3
S Top View
21
B
D
G
C
H
Drain
Gate
Source
G
Marking : 2310
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,3 VGS@4.5V
Continuous Drain Current,3 VGS@4.5V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 oC
ID@TA=70 oC
IDM
PD@TA=25 oC
Tj, Tstg
J
K
D
SC-59
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.15
S 2.40 2.80
All Dimension in mm
S
Ratings
60
±20
3.0
2.3
10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Symbol
Rthj-a
Ratings
90
Unit
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMG2310.PDF ] | |
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