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PDF BSN20 Data sheet ( Hoja de datos )
| Número de pieza | BSN20 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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BSN20
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
Features and Benefits
V(BR)DSS
50V
RDS(ON)
1.8 @ VGS = 10V
2.0 @ VGS = 4.5V
ID
TA = +25°C
500mA
450mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Backlighting
DC-DC Converters
Power Management Functions
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
SOT23
Drain
D
Top View
Gate
Source
Equivalent Circuit
GS
Top View
Ordering Information (Note 5)
Notes:
Part Number
BSN20-7
BSN20Q-7
Qualification
Standard
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N20
Date Code Key
Year
Code
Month
Code
Chengdu A/T Site
2009
W
Jan Feb
12
N20
N20 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T Site
2010
X
Mar
3
2011
Y
Apr May
45
2012
Z
Jun Jul
67
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov Dec
ND
BSN20
Document number: DS31898 Rev. 8 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
1 page  
0.8
0.7
0.6 25° C
0.5
0.4 150°C
0.3
0.2
0.1
0
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ID, DRAIN-CURRENT (A)
Fig. 11 Typical Transfer Characteristic
150° C
25° C
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 13 Source Current vs. Diode Forward Voltage
BSN20
40
35
30
25
20
Ciss
15
10
5 Coss
0 Crss
0 5 10 15 20 25 30 35 40
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Capacitance vs. Drain-Source Voltage
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A ll 7 °
H
K1 K
G AU GE PLANE
0.2 5
J
AM
L
a
L1
CB
D
FG
BSN20
Document number: DS31898 Rev. 8 - 2
5 of 6
www.diodes.com
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
8°
All Dimensions in mm
September 2013
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BSN20.PDF ] | |
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