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Datasheet BSN20 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BSN20 | N-CHANNEL ENHANCEMENT MODE FIELD MOSFET NEW PRODUCT
BSN20
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
Features and Benefits
V(BR)DSS 50V
RDS(ON)
1.8 @ VGS = 10V 2.0 @ VGS = 4.5V
ID TA = +25°C
500mA
450mA
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet |
 Diodes |
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| 4 | BSN20 | N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSN20 N-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1997 Jun 18
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transi |
 NXP Semiconductors |
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| 3 | BSN205 | N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSN205; BSN205A N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
DESCRIPTION N-ch |
NXP Semiconductors |
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| 2 | BSN205A | N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSN205; BSN205A N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
DESCRIPTION N-ch |
NXP Semiconductors |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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