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PDF PMEG3010AESB Data sheet ( Hoja de datos )

Número de pieza PMEG3010AESB
Descripción MEGA Schottky barrier rectifier
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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PMEG3010AESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
18 June 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 30 V
Low forward voltage, typical: VF = 415 mV
Low reverse current, typical: IR = 300 µA
Package height typ. 270 µm
3. Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Low power consumption applications
Ultra high-speed switching
LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
IR reverse current
Conditions
δ = 0.5 ; f = 20 kHz; Tsp ≤ 145 °C;
square wave
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
Min Typ Max Unit
- - 1A
- - 30 V
- 415 480 mV
- 60 255 µA
- 300 1250 µA
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PMEG3010AESB pdf
NXP Semiconductors
102
Zth(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.25
0.1
0.05
0.33
0.2
0.02
0 0.01
PMEG3010AESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-016802
1
10-3
10-2
10-1
Ceramic PCB, Al2O3, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
9. Characteristics
Table 7.
Symbol
V(BR)R
VF
Characteristics
Parameter
reverse breakdown
voltage
forward voltage
IR reverse current
PMEG3010AESB
Product data sheet
Conditions
IR = 10 mA; tp = 300 µs; δ = 0.02 ;
Tj = 25 °C
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
18 June 2015
Min Typ Max Unit
30 - - V
- 140 - mV
- 200 - mV
- 270 325 mV
- 300 - mV
- 355 405 mV
- 380 - mV
- 415 480 mV
- 13 - µA
- 22 90 µA
- 60 255 µA
© NXP Semiconductors N.V. 2015. All rights reserved
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PMEG3010AESB arduino
NXP Semiconductors
PMEG3010AESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
13. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
PMEG3010AESB v.2 20150618
Product data sheet
-
Modifications:
Changed product status to "Product data sheet"
PMEG3010AESB v.1 20150506
Preliminary data sheet -
Supersedes
PMEG3010AESB v.1
-
PMEG3010AESB
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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