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Número de pieza | PMEG3010AESB | |
Descripción | MEGA Schottky barrier rectifier | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! PMEG3010AESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
18 June 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 1 A
• Reverse voltage: VR ≤ 30 V
• Low forward voltage, typical: VF = 415 mV
• Low reverse current, typical: IR = 300 µA
• Package height typ. 270 µm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
IR reverse current
Conditions
δ = 0.5 ; f = 20 kHz; Tsp ≤ 145 °C;
square wave
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
Min Typ Max Unit
- - 1A
- - 30 V
- 415 480 mV
- 60 255 µA
- 300 1250 µA
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1 page NXP Semiconductors
102
Zth(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.25
0.1
0.05
0.33
0.2
0.02
0 0.01
PMEG3010AESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-016802
1
10-3
10-2
10-1
Ceramic PCB, Al2O3, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
9. Characteristics
Table 7.
Symbol
V(BR)R
VF
Characteristics
Parameter
reverse breakdown
voltage
forward voltage
IR reverse current
PMEG3010AESB
Product data sheet
Conditions
IR = 10 mA; tp = 300 µs; δ = 0.02 ;
Tj = 25 °C
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
18 June 2015
Min Typ Max Unit
30 - - V
- 140 - mV
- 200 - mV
- 270 325 mV
- 300 - mV
- 355 405 mV
- 380 - mV
- 415 480 mV
- 13 - µA
- 22 90 µA
- 60 255 µA
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 14
5 Page NXP Semiconductors
PMEG3010AESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
13. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
PMEG3010AESB v.2 20150618
Product data sheet
-
Modifications:
• Changed product status to "Product data sheet"
PMEG3010AESB v.1 20150506
Preliminary data sheet -
Supersedes
PMEG3010AESB v.1
-
PMEG3010AESB
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 14
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PMEG3010AESA | MEGA Schottky barrier rectifier | NXP Semiconductors |
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