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PDF PMEG3010AESA Data sheet ( Hoja de datos )
| Número de pieza | PMEG3010AESA | |
| Descripción | MEGA Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG3010AESA
30 V, 1 A low VF MEGA Schottky barrier rectifier
3 August 2015
Preliminary data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection in a leadless ultra small DSN1006U-2
(SOD995) Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 1 A
• Reverse voltage: VR ≤ 30 V
• Low forward voltage, typical: VF = 415 mV
• Low reverse current, typical: IR = 300 µA
• Package height typ. 270 µm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
IR reverse current
Conditions
δ = 0.5; f = 20 kHz; Tsp ≤ 145 °C;
square wave
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
Min Typ Max Unit
- - 1A
- - 30 V
- 415 480 mV
- 60 255 µA
- 300 1250 µA
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NXP Semiconductors
102
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1
10 0.05
0
0.02
0.01
PMEG3010AESA
30 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-018267
1
10-3
10-2
10-1
1
FR4 PCB, mounting pad for anode and cathode 1 cm2 each
10
102 103
tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0 0.01
aaa-016802
1
10-3
10-2
10-1
Ceramic PCB, Al2O3, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3010AESA
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
PMEG3010AESA
30 V, 1 A low VF MEGA Schottky barrier rectifier
14. Mounting
SOD995 is an ultra small Discretes Silicon No-leads (DSN) package allowing maximized
utilization of the package area for active silicon. Due to the special product design, NXP
investigated the board assembly process parameters. In order to have an optimum
soldering quality, NXP advices to follow the assembly recommendations explained in
AN11689.
PMEG3010AESA
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 15
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