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PDF SI53302 Data sheet ( Hoja de datos )

Número de pieza SI53302
Descripción 1:10 LOW JITTER UNIVERSAL BUFFER/LEVEL TRANSLATOR
Fabricantes Silicon Laboratories 
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Si53302
1:10 LOW JITTER UNIVERSAL BUFFER/LEVEL
TRANSLATOR WITH 2:1 INPUT MUX
Features
10 differential or 20 LVCMOS outputsIndependent VDD and VDDO:
Ultra-low additive jitter: 45 fs rms
1.8/2.5/3.3 V
Wide frequency range: 1 to 725 MHz 1.2/1.5 V LVCMOS output support
Any-format input with pin selectable Excellent power supply noise
output formats: LVPECL, Low Power rejection (PSRR)
LVPECL, LVDS, CML, HCSL,
LVCMOS
Selectable LVCMOS drive strength to
tailor jitter and EMI performance
2:1 clock input mux
Glitchless input clock switching
Loss of signal (LOS) monitors for
loss of input clock
Synchronous output enable
Small size: 44-QFN (7 mm x 7 mm)
Output clock division: /1, /2, /4
RoHS compliant, Pb-free
Industrial temperature range:
–40 to +85 °C
Ordering Information:
See page 29.
Applications
High-speed clock distribution
Ethernet switch/router
Optical Transport Network (OTN)
SONET/SDH
PCI Express Gen 1/2/3
Storage
Telecom
Industrial
Servers
Backplane clock distribution
Description
The Si53302 is an ultra low jitter ten output differential buffer with pin-selectable
output clock signal format and divider selection. The Si53302 features a 2:1 mux
with glitchless switching, making it ideal for redundant clocking applications. The
Si53302 utilizes Silicon Laboratories' advanced CMOS technology to fanout
clocks from 1 to 725 MHz with guaranteed low additive jitter, low skew, and low
propagation delay variability. The Si53302 features minimal cross-talk and
provides superior supply noise rejection, simplifying low jitter clock distribution in
noisy environments. Independent core and output bank supply pins provide
integrated level translation without the need for external circuitry.
Pin Assignments
Si53302
DIVA 1
SFOUTA[1] 2
SFOUTA[0] 3
Q2 4
Q2 5
GND 6
Q1 7
Q1 8
Q0 9
Q0 10
NC 11
GND 
PAD
33 DIVB
32 SFOUTB[1]
31 SFOUTB[0]
30 Q7
29 Q7
28 NC
27 Q8
26 Q8
25 Q9
24 Q9
23 CLK_SEL
Patents pending
Functional Block Diagram
Vref
LOS0
LOS1
CLK0
CLK0
CLK1
CLK1
CLK_SEL
Vref
Generator
LOS
Monitor
VDD
Power
Supply
Filtering
DivA
Bank A
Switching
Logic
DivB
Bank B
DIVA
VDDOA
SFOUTA[1:0]
OEA
Q0, Q1, Q2, Q3, Q4
/Q0, /Q1, /Q2, /Q3, /Q4
DIVB
VDDOB
SFOUTB[1:0]
OEB
Q5, Q6, Q7, Q8, Q9
/Q5, /Q6, /Q7, /Q8, /Q9
Rev. 1.1 9/14
Copyright © 2014 by Silicon Laboratories
Si53302

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SI53302 pdf
Si53302
Table 4. Output Characteristics (LVPECL)
(VDDOX = 2.5 V ± 5%, or 3.3 V ± 10%,TA = –40 to 85 °C)
Parameter
Symbol Test Condition
Min
Output DC Common Mode
Voltage
VCOM
VDDOX – 1.595
Single-Ended
Output Swing*
VSE
0.55
*Note: Unused outputs can be left floating. Do not short unused outputs to ground.
Typ
0.80
Max
Unit
VDDOX – 1.245 V
1.050
V
Table 5. Output Characteristics (Low Power LVPECL)
(VDDOX = 2.5 V ± 5%, or 3.3 V ± 10%,TA = –40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Output DC Common VCOM RL = 100 across Qn and Qn VDDOX – 1.895
Mode Voltage
Single-Ended
Output Swing
VSE RL = 100 across Qn and Qn
0.25
Typ
0.60
Max
Unit
VDDOX – 1.275 V
0.85 V
Table 6. Output Characteristics—CML
(VDDOX = 1.8 V 5%, 2.5 V 5%, or 3.3 V 10%,TA = –40 to 85 °C)
Parameter
Single-Ended Output
Swing
Symbol
VSE
Test Condition
Terminated as shown in Figure 9
(CML termination).
Min
300
Typ Max Unit
400 550
mV
Table 7. Output Characteristics—LVDS
(VDDOX = 1.8 V 5%, 2.5 V 5%, or 3.3 V 10%,TA = –40 to 85 °C)
Parameter
Single-Ended Output
Swing
Output Common
Mode Voltage
(VDDO = 2.5 V or
3.3V)
Output Common
Mode Voltage
(VDDO = 1.8 V)
Symbol
VSE
VCOM1
VCOM2
Test Condition
RL = 100 across QN and QN
VDDOX = 2.38 to 2.63 V, 2.97 to
3.63 V, RL = 100 across QN
and QN
VDDOX = 1.71 to 1.89 V,
RL = 100 across QN
and QN
Min
247
1.10
0.85
Typ Max
— 490
1.25 1.35
0.97 1.25
Unit
mV
V
V
Rev. 1.1
5

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SI53302 arduino
Si53302
Table 13. Thermal Conditions
Parameter
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
JA
JC
Test Condition
Still air
Still air
Value
49.6
32.3
Unit
°C/W
°C/W
Table 14. Absolute Maximum Ratings
Parameter
Symbol
Test Condition
Min Typ Max Unit
Storage Temperature
Supply Voltage
Input Voltage
Output Voltage
ESD Sensitivity
TS
VDD
VIN
VOUT
HBM
HBM, 100 pF, 1.5 k
–55 —
150
–0.5 —
3.8
–0.5 — VDD+ 0.3
— — VDD+ 0.3
——
2000
C
V
V
V
V
ESD Sensitivity
CDM
——
500
V
Peak Soldering
Reflow Temperature
TPEAK Pb-Free; Solder reflow profile
per JEDEC J-STD-020
260
C
Maximum Junction
Temperature
TJ
——
125
C
Note: Stresses beyond those listed in this table may cause permanent damage to the device. Functional operation
specification compliance is not implied at these conditions. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Rev. 1.1
11

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