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PDF PTFA211801F Data sheet ( Hoja de datos )
| Número de pieza | PTFA211801F | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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PTFA211801E
PTFA211801F
Thermally-Enhanced High Power RF LDMOS FETs
180 W, 2110 – 2170 MHz
Description
The PTFA211801E and PTFA211801F are thermally-enhanced,
180-watt, internally matched LDMOS FETs intended for WCDMA
applications. They are characaterized for single- and two-carrier
WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced
packaging provides the coolest operation available.
PTFA211801E
Package H-36260-2
PTFA211801F
Package H-37260-2
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1.2 A, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-25 30
Efficiency
-30 25
-35 IM3
20
-40 15
-45 10
-50
ACPR
5
-55
34
36 38 40 42 44 46
Average Output Power (dBm)
0
48
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 dBm
- Linear Gain = 15.5 dB
- Efficiency = 27.5%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 180 W
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Intermodulation Distortion
Gps
ηD
IMD
14.5 15.5
26 27.5
— –36
—
—
–34
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 04, 2007-11-15
1 page  
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1.2 A, f = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-30 35
Efficiency
30
-35 Gain
25
ACPR Low
-40
20
15
-45
-50
34
ACPR Up
36 38 40 42 44 46
Average Output Power (dBm)
10
5
0
48
PTFA211801E
PTFA211801F
Voltage Sweep
IDQ = 1.2 A, f = 2140 MHz, POUT = 51 dBm PEP,
tone spacing = 1 MHz
-10 45
-15
-20
IM3 Up
-25
-30
40
Efficiency
35
30
25
-35 20
-40 15
Gain
-45 10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.3 A
0.9 A
1.5 A
2.3 A
4.5 A
6.8 A
9.0 A
11.3 A
13.5 A
0 20 40 60 80
Case Temperature (°C)
100
Data Sheet
5 of 11
Rev. 04, 2007-11-15
5 Page 
PTFA211801E/F
Confidential, Limited Internal Distribution
Revision History:
2007-11-15
Previous Version:
2005-06-10, Data Sheet
Page
Subjects (major changes since last revision)
1, 3, 9, 10
Update product to V 4.1, with new package technologies. Update package outline diagrams.
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2007-11-15
Published by
InfineonTechnologies AG
81726 München, Germany
© InfineonTechnologies AG 2005.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 04, 2007-11-15
11 Page | ||
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