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Número de pieza | PTFA211801E | |
Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PTFA211801E (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! PTFA211801E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
180 W, 2110 – 2170 MHz
Description
The PTFA211801E is a thermally-enhanced, 180-watt, internally
matched LDMOS FET intended for WCDMA applications. It is
characaterized for single- and two-carrier WCDMA operation from
2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFA211801E
Package H-36260-2
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing
-25 30
-30
Efficiency
25
-35
IM3
-40
20
15
-45 10
-50
ACPR
5
-55
34
36 38 40 42 44 46
Average Output Power (dBm)
0
48
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 dBm
- Linear Gain = 15.5 dB
- Efficiency = 27.5%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 180 W
- Efficiency = 52%
• Integrated ESD protection
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
• Pb-free and RoHS-compliant
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
hD
IMD
Min
14.5
26
—
Typ
15.5
27.5
–36
Max
—
—
–34
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 07, 2015-03-03
1 page Rev.07,2015-03-03
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet PTFA211801E.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTFA211801E | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
PTFA211801F | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
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