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PDF PMLL4153 Data sheet ( Hoja de datos )
| Número de pieza | PMLL4153 | |
| Descripción | High-speed diode | |
| Fabricantes | NXP Semiconductors | |
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PMLL4153
High-speed diode
Rev. 3 — 19 August 2010
Product data sheet
1. Product profile
1.1 General description
High-speed switching diode fabricated in planar technology, and encapsulated in a small
hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features and benefits
High switching speed: max. 4 ns
General application
Reverse voltage: max. 50 V
Repetitive peak reverse voltage: max. 75 V
Repetitive peak forward current: max. 450 mA
Small hermetically sealed glass SMD package
1.3 Applications
High-speed switching
Military and industrial applications
1.4 Quick reference data
Table 1.
Symbol
IF
VR
VF
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
Conditions
IF = 50 mA
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
2. Pinning information
Min Typ Max Unit
[1] - - 200 mA
- - 50 V
740 -
880 mV
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking band indicates the cathode.
Simplified outline
[1]
ka
Graphic symbol
12
006aab040
1 page  
NXP Semiconductors
8. Test information
PMLL4153
High-speed diode
RS = 50 Ω
V = VR + IF × RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
mga881
VR
tr
10 %
tp
90 %
input signal
Fig 6. Reverse recovery voltage test circuit and waveforms
t
+ IF
trr
t
(1)
output signal
I 1 kΩ
RS = 50 Ω
D.U.T.
450 Ω
OSCILLOSCOPE
Ri = 50 Ω
I
90%
10%
tr
tp
input
signal
1.0
VF
(V)
Vfr
t tfr t
output
signal
mbh181
Input signal: forward pulse rise time tr = 0.4 ns; forward pulse duration tp = 100 ns; duty factor δ = 0.01
Fig 7. Forward recovery time test circuit and waveforms
9. Package outline
0.3
3.7
3.3
Dimensions in mm
Fig 8. Package outline SOD80C
0.3
1.60
1.45
06-03-16
PMLL4153
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
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| PDF Descargar | [ Datasheet PMLL4153.PDF ] | |
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