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PDF PMLL4150 Data sheet ( Hoja de datos )
| Número de pieza | PMLL4150 | |
| Descripción | High-speed diodes | |
| Fabricantes | Philips | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
1/3 page (Datasheet)
M3D054
PMLL4150; PMLL4151;
PMLL4153
High-speed diodes
Product specification
Supersedes data of April 1996
1996 Sep 18
1 page  
Philips Semiconductors
High-speed diodes
Product specification
PMLL4150; PMLL4151; PMLL4153
SYMBOL
PARAMETER
trr reverse recovery time
PMLL4150
trr reverse recovery time
PMLL4151
trr reverse recovery time
PMLL4153
tfr forward recovery time
CONDITIONS
when switched from IF = 10 mA to
IR = 1 mA; RL = 100 Ω; measured at
IR = 0.1 mA; see Fig.7
when switched from IF = 10 mA to
200 mA to IR = 10 mA to 200 mA;
RL = 100 Ω; measured at IR = 0.1 × IF;
see Fig.7
when switched from IF = 200 mA to
400 mA to IR = 200 mA to 400 mA;
RL = 100 Ω; measured at IR = 0.1 × IF;
see Fig.7
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
when switched to IF = 200 mA; tr = 0.4 ns;
measured at VF = 1 V; see Fig.8
MIN.
−
−
−
−
−
−
−
−
MAX. UNIT
6 ns
4 ns
6 ns
4 ns
2 ns
4 ns
2 ns
10 ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
300
350
UNIT
K/W
K/W
1996 Sep 18
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PMLL4150.PDF ] | |
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