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PDF MRF18085ALSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF18085ALSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and
multicarrier amplifier applications. To be used in Class AB for PCN - PCS/
cellular radio and WLL applications. Specified for GSM - GSM EDGE
1805 - 1880 MHz.
• GSM and GSM EDGE Performance, Full Frequency Band
(1805 - 1880 MHz)
Power Gain - 15 dB (Typ) @ 85 Watts CW
Efficiency - 52% (Typ) @ 85 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1805 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF18085A
Rev. 4, 12/2004
MRF18085AR3
MRF18085ALSR3
1800 - 1880 MHz, 85 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF18085AR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF18085ALSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +65
- 0.5, +15
273
1.56
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Tstg
TJ
Symbol
- 65 to +150
200
Value (1)
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
RθJC
0.79
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF18085AR3 MRF18085ALSR3
5-1
1 page  
Zo = 10 Ω
f = 1990 MHz
f = 1710 MHz
Zload
f = 1990 MHz
f = 1710 MHz
Zsource
VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW
f
MHz
Zsource
Ω
Zload
Ω
1710
1.13 - j3.62
1.79 - j2.88
1785
1.61 - j4.23
1.82 - j3.15
1805
1.69 - j4.34
1.90 - j2.66
1880
2.83 - j5.25
2.09 - j2.77
1930
3.00 - j5.18
2.01 - j2.44
1960
4.39 - j4.97
2.01 - j2.57
1990
6.59 - j4.74
1.79 - j2.37
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z source
Z load
Figure 9. Series Equivalent Source and Load Impedance
MRF18085AR3 MRF18085ALSR3
5-5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF18085ALSR3.PDF ] | |
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