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Datasheet MRF18085ALSR3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MRF18085ALSR3 | RF Power Field Effect Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18085A/D
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular |
 Motorola Semiconductors |
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| 1 | MRF18085ALSR3 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class |
 Freescale Semiconductor |
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