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PDF IXTA160N10T7 Data sheet ( Hoja de datos )

Número de pieza IXTA160N10T7
Descripción Power MOSFET ( Transistor )
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXTA160N10T7 Hoja de datos, Descripción, Manual

Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA160N10T7
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
100
160
7.0
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS
TJ 175°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA..7)
100 V
100 V
± 30
160
120
430
25
500
3
V
A
A
A
A
mJ
V/ns
1
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
430
-55 ... +175
175
-55 ... +175
300
260
3
W Features
°C Ultra-low On Resistance
°C Unclamped Inductive Switching (UIS)
°C rated
°C
°C
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
g
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 1 mA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
± 200 nA
5 μA
250 μA
5.8 7.0 mΩ
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
© 2006 IXYS CORPORATION All rights reserved
DS99709 (11/06)

1 page




IXTA160N10T7 pdf
IXTA160N10T7
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
90
RG = 5Ω
80 VGS = 10V
VDS = 50V
70
60
50 I D = 50A
40
I D = 25A
30
20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistiv e Turn-on
Switching Times vs. Gate Resistance
170 65
t r td(on) - - - -
150 TJ = 125ºC, VGS = 10V
VDS = 50V
130
I D = 50A
60
55
110 50
I D = 25A
90 45
70 40
50 35
30 30
4 6 8 10 12 14 16 18 20
RG - Ohms
44
43
42
41
40
39
38
25
Fig. 17. Resistiv e Turn-off
Switching Times vs. Drain Current
TJ = 125ºC
t f td(off) - - - -
RG = 5Ω, VGS = 10V
VDS = 50V
80
77
74
71
68
TJ = 25ºC
65
62
TJ = 125ºC
59
56
53
TJ = 25ºC
50
47
44
30 35 40 45 50
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
65
60
RG = 5Ω
55 VGS = 10V
50 VDS = 50V
TJ = 25ºC
45
40
TJ = 125ºC
35
30
25 30 35 40 45 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
90 120
85
t f td(off) - - - -
115
80
75 I D = 25A
RG = 5Ω, VGS = 10V
VDS = 50V
110
105
70 100
65 I D = 50A
60
95
90
55 85
50 I D = 25A
45
80
75
40 70
35
30
25
I D = 50A
65
60
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times v s. Gate Resistance
140 205
130 t f
td(off) - - - -
190
120 TJ = 125ºC, VGS = 10V
VDS = 50V
110
I D = 25A
175
160
100 145
90 I D = 50A 130
80 115
70 100
60 85
50 70
40 55
30 40
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_160N10T (5V) 11-16-06-A.xls

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