|
|
Datasheet IXTA160N10T7 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IXTA160N10T7 | Power MOSFET, Transistor Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA160N10T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 160 7.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to |  IXYS Corporation | mosfet |
IXT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IXTA02N250 | High Voltage Power MOSFETs High Voltage Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode
IXTA02N250 IXTH02N250 IXTV02N250S
VDSS = ID25 = ≤RDS(on)
2500V 200mA 450Ω
TO-263 (IXTA)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150  IXYS mosfet | | |
| 2 | IXTA05N100 | High Voltage MOSFET
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 05N100 VDSS IXTP 05N100 I D25
RDS(on)
= 1000 V = 750 mA = 17 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° IXYS Corporation mosfet | | |
| 3 | IXTA08N100D2 | Depletion Mode MOSFET Preliminary Technical Information
Depletion Mode MOSFET
IXTY08N100D2 IXTA08N100D2 IXTP08N100D2
VDSX ID(on)
RDS(on)
= > ≤
1000V 800mA 21Ω
N-Channel
TO-252 (IXTY)
G S
D (Tab)
Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C Continuous Transient IXYS mosfet | | |
| 4 | IXTA08N50D2 | Depletion Mode MOSFET Preliminary Technical Information
Depletion Mode MOSFET
IXTY08N50D2 IXTA08N50D2 IXTP08N50D2
VDSX ID(on)
RDS(on)
= > ≤
500V 800mA 4.6Ω
N-Channel
TO-252 (IXTY)
G S
D (Tab)
Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C Continuous Transient TC IXYS Corporation mosfet | | |
| 5 | IXTA102N15T | Power MOSFET, Transistor Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
TO-220 (IXTP)
VDSS = ID25 =
RDS(on) ≤
150V 102A 18mΩ
TO-3P (IXTQ)
GS
(TAB)
GD S
(TAB)
G DS
(TAB)
G D S
(TAB)
Symbol VDSS VDGR VGSS VGSM I IXYS mosfet | | |
| 6 | IXTA110N055P | PolarHT Power MOSFET
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 110N055P IXTA 110N055P IXTP 110N055P
VDSS ID25
RDS(on)
= 55 V = 110 A = 13.5 mΩ
TO-3P (IXTQ)
Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 175°C TJ = 25°C IXYS Corporation mosfet | | |
| 7 | IXTA110N055T | Power MOSFET, Transistor Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA110N055T IXTP110N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 110 7.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175 IXYS Corporation mosfet | |
| Esta página es del resultado de búsqueda del IXTA160N10T7. Si pulsa el resultado de búsqueda de IXTA160N10T7 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |