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PDF STA6611 Data sheet ( Hoja de datos )
| Número de pieza | STA6611 | |
| Descripción | Dual Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
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STA6611
SamHop Microelectronics Corp.
Nov. 22, 2006
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
PRODUCT SUMMARY (N-Channel)
VDSS
30V
ID RDS(ON) ( m Ω ) Max
23 @ VGS = 10V
7.6A
30 @ VGS = 4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
-30V
ID
-6.6A
RDS(ON) ( m Ω ) Max
35 @ VGS = -10V
55 @ VGS = -4.5V
D1 D1 D2 D2
8765
P DIP -8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-Channel P-Channel
Drain-S ource Voltage
VDS 30 -30
Gate-S ource Voltage
a
Drain C urrent-C ontinuous @ Ta
-P ulsed b
25 C
70 C
VGS
ID
IDM
20 20
7.6 - 6.6
6 5.3
30 28
Drain-S ource Diode Forward C urrent a
IS 1.7 -1.7
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
Ta= 25 C
Ta=70 C
PD
TJ, TSTG
3
2
-55 to 150
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a R JA
41.5
1
Unit
V
V
A
A
A
A
W
C
C /W
1 page  
S TA6611
1.3
1.2 V DS =V GS
ID=250uA
1.1
1.0
0.9
0.8
6 0.7
0.6
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
60
ID=7A
50
40
75 C
30 125 C
20
25 C
10
0
0 2 4 6 8 10
V G S , G ate-S ource Voltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
1.15
1.10 ID=250uA
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
125 C
10.0
25 C
75 C
1.0
0.4 0.6
0.8 1.0 1.2
1.4
V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STA6611.PDF ] | |
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