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Número de pieza | STA6610 | |
Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | SamHop Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STA6610 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! S TA6610
S amHop Microelectronics C orp.
Nov.24 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m Ω ) Max
23 @ VGS = 10V
30V 7.6A
35 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
D1 D1 D2 D2
8765
P DIP -8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
G ate-S ource Voltage
a
Drain C urrent-C ontinuous @ T a
-P uls ed b
25 C
70 C
Drain-S ource Diode F orward C urrent a
Maximum P ower Dissipation a
Operating J unction and S torage
Temperature R ange
Ta= 25 C
T a=70 C
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
N-Channel
30
20
7.6
6
30
1.7
3
2
-55 to 150
Unit
V
V
A
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
41.5
C /W
1
1 page S TA6610
900
750
Ciss
600
450
300
Coss
150
Crss
60
0 5 10 15 20 25 30
VDS, Drain-to Source Voltage (V)
F igure 8. C apacitance
250
100
60
10
T D(off)
Tr
Tf
T D(on)
1 V DS =15V ,ID=7A
V G S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (Ω)
F igure 11.s witching characteris tics
9
10
VDS =15V
8 ID=7A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, T otal G ate C harge (nC )
F igure 9. G ate C harge
40
10 R DS(ON) Limit
11
0.1
0.03
0.1
VGS =10V
S ingle P ulse
T A=25 C
1
10ms
100ms
1s
DC
10 30 50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10 100
1000
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet STA6610.PDF ] |
Número de pieza | Descripción | Fabricantes |
STA6610 | Dual N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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