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PDF STS3417 Data sheet ( Hoja de datos )
| Número de pieza | STS3417 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STS3417 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Gr
Pr
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS3417
Ver 1.0
PRODUCT SUMMARY
VDSS
-30V
ID RDS(ON) (mΩ) Max
96 @ VGS=-4.5V
100 @ VGS=-4.0V
-3A 103 @ VGS=-3.7V
111 @ VGS=-3.1V
123 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
PD
Maximum Power Dissipation a
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±12
-3
-11
1.25
-55 to 150
100
Units
V
V
A
A
W
°C
°C/W
Details are subject to change without notice.
1
Aug,29,2012
www.samhop.com.tw
1 page  
STS3417
1000
100
10
rth - tw
Mounted on FR-4 board
1
Single Pulse
0.1
0.001
0.01
0.1 1 10
Pulse width tw (S)
Safe operating area
100
10 RDS(ON) Limit
1
10us
100us
1ms
10ms
0.1 VGS=-4.5V
Single Pulse
TA=25 C
0.01
0.1 1
1s
DC
10
Drain-source voltage -VDS (V)
100 1000
Ver 1.0
Aug,29,2012
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STS3417.PDF ] | |
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