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Número de pieza | STS3414 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | SamHop Microelectronics | |
Logotipo | ||
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Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STS3414
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
50 @ VGS=10V
30V 4A 60 @ VGS=4.5V
75 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TA=25°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
30
±12
4
15
1.25
-55 to 150
100
Units
V
V
A
A
W
°C
°C/W
Details are subject to change without notice.
1
Jan,16,2009
www.samhop.com.tw
1 page STS3414
Ver 1.1
V DD
RL
V IN
D VOUT
VG S
RGEN G
S
Figure 13. Switching Test Circuit
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULS E WIDTH
Figure 14. Switching Waveforms
10
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10 100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
Jan,16,2009
5 www.samhop.com.tw
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet STS3414.PDF ] |
Número de pieza | Descripción | Fabricantes |
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STS3419 | P-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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