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Número de pieza | SSS3401 | |
Descripción | P-Channel Enhancement Mode MOSFET | |
Fabricantes | South Sea Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSS3401 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! SSS3401
P-Channel Enhancement Mode MOSFET
VDS (V)
-30V
Product Summary
ID (A)
RDS(ON) (mΩ) Max
75 @VGS = -10V
-3A
100 @VGS = -4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
SOT-23
D
G
S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS -30
Gate-Source Voltage
Drain Current-Continuous @ TJ = 25oC
-Pulsed b
VGS +- 20
ID -3
IDM -10
Drain-Source Diode Forward Current a
IS -1.25
Maximum Power Dissipation a
PD 1.25
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
R JA
100
Unit
V
V
A
A
A
W
oC
oC/W
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, November 2007 (Rev 3.0)
1
1 page SSS3401
VGS
VDD
VIN RL
D
RGEN G
S
VOUT
Figure 11. Switching Test Circuit
10
td(on)
VOUT
ton
tr
90%
10%
td(off)
toff
90%
tf
10%
VIN 10%
50%
50%
INVERTED
PULSE WIDTH
90%
Figure 12. Switching Waveforms
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.0.5
PDM
t1
t2
0.02
1. R JA(t) = r(t)*R JA
0.01
2. R JA = see datasheet
Single Pulse
3. TJM - TA = PDM*R JA(t)
4. Duty Cycle, D = t1/t2
0.01
10 -5
10-4
10-3
10-2
10-1
1
10 10 2 10 3
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, November 2007 (Rev 3.0)
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SSS3401.PDF ] |
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