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PDF SSS3402 Data sheet ( Hoja de datos )

Número de pieza SSS3402
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes South Sea Semiconductor 
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No Preview Available ! SSS3402 Hoja de datos, Descripción, Manual

SSS3402
N-Channel Enhancement Mode MOSFET
VDS (V)
30V
Product Summary
ID (A)
RDS(ON) (m) Max
4.6A
30 @VGS = 10V
50 @VGS = 4.5V
FEATURES
Super high density cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
Pb free.
SOT-23
D
G
S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Limited
Drain-Source Voltage
VDS 30
Gate-Source Voltage
Drain Current-Continuous @ Ta
-Pulsed b
25 oC
70 oC
VGS
ID
IDM
+- 20
4.6
3.75
16
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Ta=25 oC
Ta=70 oC
IS
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
1.25
1.25
0.8
-55 to 150
TTHHEERRMMAALL CCHHARRAACCTTEERRISISTTICICSS
Thermal Resistance, Junction-to-Ambient a
R JA
100
Unit
V
A
W
oC
o
C/W
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, January 2008 (Rev 2.2)
1

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SSS3402 pdf
SSS3402
VGS
VDD
VIN RL
D
RGEN G
S
VOUT
Figure 11. Switching Test Circuit
10
td(on)
VOUT
ton
tr
td(off)
90%
10% INVERTED
toff
90%
tf
10%
VIN 10%
50%
90%
50%
PULSE WIDTH
Figure 12. Switching Waveforms
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.0.5
PDM
t1
t2
0.02
1. R JA(t) = r(t)*R JA
0.01
2. R JA = see datasheet
Single Pulse
3. TJM - TA = PDM*R JA(t)
4. Duty Cycle, D = t1/t2
0.01
10 -5
10-4
10-3
10-2
10-1
1
10 10 2 10 3
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, January 2008 (Rev 2.2)
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