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Número de pieza | MJE243G | |
Descripción | Complementary Silicon Power Plastic Transistors | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MJE243G (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MJE243G (NPN),
MJE253G (PNP)
Complementary Silicon
Power Plastic Transistors
These devices are designed for low power audio amplifier and
low−current, high−speed switching applications.
Features
• High Collector−Emitter Sustaining Voltage
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current Gain Bandwidth Product
• Annular Construction for Low Leakages
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VCEO
VCB
VEB
IC
ICM
IB
PD
100 Vdc
100 Vdc
7.0 Vdc
4.0 Adc
8.0 Adc
10 Adc
15 W
120 mW/_C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
PD
1.5 W
12 mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
RqJC
RqJA
Max
8.34
83.4
Unit
_C/W
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 15 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
3
BASE
EMITTER 1
3
BASE
EMITTER 1
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
JE2x3G
Y = Year
WW = Work Week
JE2x3 = Device Code
x = 4 or 5
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE243G
TO−225
(Pb−Free)
500 Units/Box
MJE253G
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
MJE243/D
http://www.Datasheet4U.com
1 page MJE243G (NPN), MJE253G (PNP)
NPN
MJE243
PNP
MJE253
500
300 TJ = 150°C
200
25°C
100
70 - 55°C
50
VCE = 1.0 V
VCE = 2.0 V
200
TJ = 150°C
100
70 25°C
50
- 55°C
30
20
VCE = 1.0 V
VCE = 2.0 V
30
20
10
7.0
5.0
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
10
7.0
5.0
3.0
2.0
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
1.4
TJ = 25°C
1.2
1.4
TJ = 25°C
1.2
1.0
0.8 VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 1.0 V
1.0
VBE(sat) @ IC/IB = 10
0.8
0.6 VBE @ VCE = 1.0 V
0.4 IC/IB = 10
0.2
VCE(sat)
0
0.04 0.06 0.1
0.2
0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
5.0
2.0 4.0
0.4
0.2
VCE(sat)
0
0.04 0.06 0.1
0.2
IC/IB = 10
0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
5.0
2.0
4.0
+ 2.5 + 2.5
+ 2.0 *APPLIES FOR IC/IB ≤ hFE/3
+ 1.5
+ 2.0 *APPLIES FOR IC/IB ≤ hFE/3
+ 1.5
+ 1.0
+ 0.5 *qVC FOR VCE(sat)
0
- 0.5
25°C to 150°C
- 55°C to 25°C
+ 1.0
+ 0.5 *qVC FOR VCE(sat)
0
- 0.5
25°C to 150°C
- 55°C to 25°C
- 1.0
- 1.5
- 2.0 qVB FOR VBE
25°C to 150°C
- 55°C to 25°C
- 1.0
- 1.5 qVB FOR VBE
- 2.0
25°C to 150°C
- 55°C to 25°C
- 2.5
0.04 0.06
0.1 0.2 0.4 0.6 1.0 2.0 4.0
- 2.5
0.04 0.06 0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
2.0
4.0
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MJE243G.PDF ] |
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