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PDF MJE243 Data sheet ( Hoja de datos )
| Número de pieza | MJE243 | |
| Descripción | POWER TRANSISTORS COMPLEMENTARY SILICON | |
| Fabricantes | ON | |
| Logotipo |  |
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MJE243 − NPN,
MJE253 − PNP
Preferred Device
Complementary Silicon
Power Plastic Transistors
These devices are designed for low power audio amplifier and
low−current, high−speed switching applications.
Features
• High Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min)
• High DC Current Gain @ IC = 200 mAdc
hFE = 40 −200
= 40−120
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
• High Current Gain Bandwidth Product −
fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
− Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
Value
Unit
100 Vdc
100 Vdc
7.0 Vdc
4.0 Adc
8.0
10 Adc
15 W
0.12 mW/_C
1.5
0.012
W
mW/_C
–65 to +150 _C
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction−to−Ambient
Symbol
qJC
qJA
Max
8.34
83.4
Unit
_C/W
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
1
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 15 WATTS
321
TO−225
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
JE2x3G
Y = Year
WW = Work Week
JE2x3 = Device Code
x = 4 or 5
G = Pb−Free Package
ORDERING INFORMATION
Device
MJE243
MJE243G
MJE253
Package
TO−225
TO−225
(Pb−Free)
TO−225
Shipping
500 Units/Box
500 Units/Box
500 Units/Box
MJE253G
TO−225
(Pb−Free)
500 Units/Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJE243/D
1 page  
MJE243 − NPN, MJE253 − PNP
NPN
MJE243
PNP
MJE253
500
300 TJ = 150°C
200
25°C
100
70 −55 °C
50
VCE = 1.0 V
VCE = 2.0 V
200
TJ = 150°C
100
70 25°C
50
−55 °C
30
20
VCE = 1.0 V
VCE = 2.0 V
30
20
10
7.0
5.0
0.04 0.06
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 4.0
10
7.0
5.0
3.0
2.0
0.04 0.06
Figure 8. DC Current Gain
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
1.4
TJ = 25°C
1.2
1.4
TJ = 25°C
1.2
1.0
0.8 VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 1.0 V
1.0
VBE(sat) @ IC/IB = 10
0.8
0.6 VBE @ VCE = 1.0 V
0.4 IC/IB = 10
0.2
VCE(sat)
0
0.04 0.06 0.1
0.2
0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
5.0
2.0 4.0
0.4
0.2
VCE(sat)
0
0.04 0.06 0.1
0.2
IC/IB = 10
0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
5.0
2.0
4.0
+2.5 +2.5
+2.0 *APPLIES FOR IC/IB ≤ hFE/3
+1.5
+2.0 *APPLIES FOR IC/IB ≤ hFE/3
+1.5
+1.0
+0.5 *qVC FOR VCE(sat)
0
−0.5
25°C to 150°C
−55 °C to 25°C
+1.0
+0.5 *qVC FOR VCE(sat)
0
−0.5
25°C to 150°C
−55 °C to 25°C
−1.0
−1.5
−2.0 qVB FOR VBE
25°C to 150°C
−55 °C to 25°C
−1.0
−1.5 qVB FOR VBE
−2.0
25°C to 150°C
−55 °C to 25°C
−2.5
0.04 0.06
0.1 0.2 0.4 0.6 1.0 2.0 4.0
−2.5
0.04 0.06 0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
2.0
4.0
http://onsemi.com
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| PDF Descargar | [ Datasheet MJE243.PDF ] | |
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