PDF MJE243 Data sheet ( Hoja de datos )

Número de pieza	MJE243
Descripción	4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS
Fabricantes	Motorola Semiconductors
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc hFE = 40 – 200 hFE = 40 – 120 — MJE243, MJE253 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc • High Current Gain Bandwidth Product — fT = 40 MHz (Min) @ IC = 100 mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ• Annular Construction for Low Leakages ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICBO = 100 nAdc (Max) @ Rated VCB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage Collector Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C Derate @ 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic Thermal Resistance, Junction to Case ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient Symbol VCEO VCB VEB IC IB PD PD TJ, Tstg Symbol θJC θJA Value 100 100 7.0 4.0 8.0 10 15 0.12 1.5 0.012 – 65 to + 150 Unit Vdc Vdc Vdc Adc Adc Watts W/ac Watts W/_C _C Max Unit 8.34 _C/W 83.4 _C/W 16 1.6 MJNEP2N43* MJPEN2P 53* *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS CASE 77–08 TO–225AA 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 140 T, TEMPERATURE (°C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 ©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data 0 160 1 1 page PACKAGE DIMENSIONS MJE243 MJE253 –B– U F QM –A– 123 H K C VJ GR S 0.25 (0.010) M A M B M D 2 PL 0.25 (0.010) M A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.425 0.435 B 0.295 0.305 C 0.095 0.105 D 0.020 0.026 F 0.115 0.130 G 0.094 BSC H 0.050 0.095 J 0.015 0.025 K 0.575 0.655 M 5_ TYP Q 0.148 0.158 R 0.045 0.055 S 0.025 0.035 U 0.145 0.155 V 0.040 ––– MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5_ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ––– STYLE 1: PIN 1. 2. 3. EMITTER COLLECTOR BASE CASE 77–08 TO–225AA ISSUE V Motorola Bipolar Power Transistor Device Data 5 5 Page

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PDF Descargar	[ Datasheet MJE243.PDF ]

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