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PDF AOD4112 Data sheet ( Hoja de datos )
| Número de pieza | AOD4112 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD4112
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
SRFETTM The AOD4112 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R DS(ON),and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
applications. Standard Product AOD4112 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V
ID = 20A (VGS = 10V)
RDS(ON) < 9.5mΩ (VGS = 10V)
RDS(ON) < 14.5mΩ (VGS = 4.5V)
UIS Tested!
Rg,Ciss,Coss,Crss Tested!
TO-252
D-PAK
D
Top View
Drain Connected to
Tab G
GD S
S
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current GF
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
20
20
80
25
94
50
25
5.7
3.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
18
44
2.4
Max
22
55
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4112
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 60
90 TA=25°C
50
40
60 30
TA=125°C
30
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
100
80
60
40
20
0
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOD4112.PDF ] | |
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