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PDF AOD4110 Data sheet ( Hoja de datos )
| Número de pieza | AOD4110 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD4110
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
The AOD4110 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AOD4110 is Pb-free (meets ROHS & Sony
259 specifications).
VDS (V) = 30V
ID =40A (VGS = 10V)
RDS(ON) < 7.2mΩ (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 4.5V)
UIS Tested!
Rg,Ciss,Coss,Crss Tested
TO-252 D-PAK
D
Top View
Drain Connected to
Tab
SRFET TM
Soft Recovery MOSFET:
G Integrated Schottky Diode
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C G
Current B
TC=100°C G
Pulsed Drain Current C
Continuous Drain
CurrentA
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
TC=25°C
Power Dissipation B TC=100°C
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
ID
IDM
IDSM
IAR
EAR
PD
PDSM
TJ, TSTG
S
Maximum
30
±20
40
40
180
22
18
25
94
63
31
6
4
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 75
90
TA=25°C
60
TA=150°C
30
60
45
30
15
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B,G)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
100
80
TJ(Max)=150°C
60 TA=25°C
40
20
0
1E-04 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
PD
Ton T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOD4110.PDF ] | |
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