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PDF AO4458 Data sheet ( Hoja de datos )
| Número de pieza | AO4458 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4458
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4458/L uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is ESD protected and it is suitable for use as
a load switch or in PWM applications. AO4458 and
AO4458L are electrically identical.
-RoHs Compliant
-AO4458L is Halogen Free
Features
VDS (V) = 30V
ID = 20A
(VGS = 10V)
RDS(ON) < 4.6mΩ (VGS = 10V)
RDS(ON) < 6.4mΩ (VGS = 4.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current G
Repetitive avalanche energy L=0.3mH G
ID
IDM
IAR
EAR
20 15
17 12
80
50
375
Power Dissipation A
TA=25°C
TA=70°C
PD
3.1 1.7
2.0 1.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady State
Steady State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO4458.PDF ] | |
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