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PDF AO4452 Data sheet ( Hoja de datos )
| Número de pieza | AO4452 | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | Freescale | |
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AO4452
100V N-Channel MOSFET
General Description
The AO4452 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well
suited for PWM, load switching and general purpose applications.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100V
8A
< 25mΩ
< 31mΩ
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
S
Maximum
100
±25
8
6.5
57
28
39
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
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1 page  
AO4452
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
300
250 di/dt=800A/µs 125ºC
Irm
200
25ºC
150 125ºC
15
12
9
6
100
Qrr
25ºC
3
50 0
0 5 10 15 20 25 30
IS (A)
Figure 13: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
150 30
Is=20A
120
90
60 Qrr
125ºC
25ºC
125ºC
26
22
18
14
10
30
Irm
25ºC
6
2
0 -2
0 200 400 600 800 1000
di/dt (A/µs)
Figure 15: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
24
di/dt=800A/µs
125ºC
20
2
1.6
16 trr
25ºC
1.2
12
8
4S
125ºC
0.8
0.4
25ºC
00
0 5 10 15 20 25 30
IS (A)
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
30
trr
25
40
20
15
25ºC
125ºC
Is=20A
3
2
10 25ºC
5S
125ºC
1
00
0 200 400 600 800 1000
di/dt (A/µs)
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
5/6
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AO4452.PDF ] | |
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