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Datasheet AO4450 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | AO4450 | N-Channel Enhancement Mode Field Effect Transistor AO4450 N-Channel Enhancement Mode Field Effect Transistor
General Description
provide
Features
VDS (V) = 40V ID = 6.6A (VGS = 10V) RDS(ON) <30mΩ (VGS = 10V) RDS(ON) < 43mΩ (VGS = 4.5V)
The AO4450 uses advanced trench technology to excellent RDS(ON) and low gate charge. This |  Alpha & Omega Semiconductors | transistor |
| 2 | AO4450 | 40V N-Channel MOSFET AO4450
40V N-Channel MOSFET
General Description
The AO4450 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 7 |  Freescale | mosfet |
AO4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AO4302 | N-Channel MOSFET AO4302
30V N-Channel MOSFET
General Description
30 36 Product Summary
The AO4302 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VG Alpha & Omega Semiconductors mosfet | | |
| 2 | AO4304 | N-Channel MOSFET AO4304
30V N-Channel MOSFET
General Description
Product Summary
The AO4304 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) Alpha & Omega Semiconductors mosfet | | |
| 3 | AO4310 | N-Channel MOSFET AO4310
36V N-Channel MOSFET
General Description
The AO4310 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is Alpha & Omega Semiconductors mosfet | | |
| 4 | AO4312 | N-Channel MOSFET AO4312
36V N-Channel MOSFET
General Description
The AO4312 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is Alpha & Omega Semiconductors mosfet | | |
| 5 | AO4354 | N-Channel AlphaMOS AO4354
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5 Alpha & Omega Semiconductors data | | |
| 6 | AO4400 | N-Channel Enhancement Mode Field Effect Transistor July 2001
AO4401 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Alpha & Omega Semiconductors transistor | | |
| 7 | AO4401 | P-Channel Enhancement Mode Field Effect Transistor July 2001
AO4401 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Alpha & Omega Semiconductors transistor | |
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