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PDF AO4453 Data sheet ( Hoja de datos )
| Número de pieza | AO4453 | |
| Descripción | 12V P-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4453
12V P-Channel MOSFET
General Description
Product Summary
The AO4453 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=-4.5V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS =-3.3V)
RDS(ON) (at VGS =-2.5V)
RDS(ON) (at VGS =-1.8V)
RDS(ON) (at VGS =-1.5V)
100% UIS Tested
100% Rg Tested
-12V
-9A
< 19mΩ
< 22mΩ
< 26mΩ
< 36mΩ
< 50mΩ
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS
EAS
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
-12
±8
-9
-7
-55
20
20
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
42
70
20
Max
50
85
30
D
S
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Oct. 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AO4453
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=85°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
Rev 0: Oct. 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AO4453.PDF ] | |
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