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PDF AO8801A Data sheet ( Hoja de datos )

Número de pieza AO8801A
Descripción 20V P-Channel MOSFET
Fabricantes FreesCale 
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AO8801A
20V P-Channel MOSFET
General Description
The AO8801A uses advanced trench technology to provide excellent R ,DS(ON) low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS= -4.5V)
RDS(ON) (at VGS= -2.5V)
RDS(ON) (at VGS= -1.8V)
-20V
-4.5A
< 42m
< 54m
< 68m
Top View
D1 1
S1 2
S1 3
G1 4
8
7
6
5
D2
S2
S2
G2
G1
D1
G2
S1
D2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-20
±8
-4.5
-3.6
-30
1.5
0.96
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
63
101
64
Max
83
130
83
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
www.freescale.net.cn
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AO8801A pdf
VDC
Vgs
Ig
Vds
Vgs
Rg
Vgs
AO8801A
20V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
-10V
Qg
Vds
VDC
DUT
Qgs Qgd
Resistive Switching Test Circuit & W aveforms
RL
Vgs
ton
td(o n) t r
to ff
t d (o ff)
tf
DUT VDC Vdd
Vds
Charge
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & W aveforms
Vgs
Q rr = - Idt
+
Vdd
VDC
-
-Isd
-Vds
-I F t rr
dI/dt
-I RM
Vdd
5/5
www.freescale.net.cn

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