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PDF PTFA181001F Data sheet ( Hoja de datos )
| Número de pieza | PTFA181001F | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon Technologies | |
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PTFA181001E
PTFA181001F
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1805 – 1880 MHz
www.DataSheet4U.net
Description
The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs
designed for EDGE and WCDMA power amplifier applications in the
DCS band. Features include input and output matching, and
thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA181001E
Package H-36248-2
PTFA181001F
Package H-37248-2
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-23 35
Efficiency
-28 30
-33 IM3
-38
25
20
-43 15
-48
-53
34
ACPR 10
36 38 40 42 44
Average Output Power (dBm)
5
46
Features
• Thermally-enhanced packages
• Broadband internal matching
• Typical EDGE performance at 1879.8 MHz, 28 V
- Average output power = 45 W
- Linear Gain = 16.5 dB
- Efficiency = 36%
- EVM RMS = 1.8%
• Typical CW performance, 1880 MHz, 28 V
- Output power at P–1dB = 120 W
- Gain 15.5 dB
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 45 W, ƒ = 1879.8 MHz
Characteristic
Symbol Min Typ Max Unit
Error Vector Magnitude
RMS EVM
—
1.8
—
%
Modulation Spectrum @ 400 KHz
ACPR
— –61
—
dBc
Modulation Spectrum @ 600 KHz
ACPR
— –73
—
dBc
Gain
Drain Efficiency
Gps
— 16.5
—
dB
ηD
— 36
—
%
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 02.1, 2009-02-20
1 page  
Typical Performance (cont.)
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz
18 65
17
Gain
16
55
45
15 35
14
Efficiency
13
25
15
12 5
36 38 40 42 44 46 48 50 52
Output Power (dBm)
PTFA181001E
PTFA181001F
Output Power (P–1dB) vs. Drain Voltage
IDQ = 750 mA, ƒ = 1880 MHz
52
51
50
49
24
26 28 30
Drain Voltage (V)
32
IS-95 CDMA Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz
TCASE = 25°C
35 TCASE = 90°C
30
Efficiency
-10
-20
25
20 ACP FC – 0.75 MHz
-30
-40
15 -50
10 -60
5 ACPR FC + 1.98 MHz -70
0 -80
33 35 37 39 41 43 45 47
Output Power, Avg. (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.15 A
0.44 A
0.73 A
1.10 A
2.20 A
3.30 A
4.41 A
5.51 A
0 20 40 60 80
Case Temperature (°C)
100
Data Sheet
5 of 11
Rev. 02.1, 2009-02-20
5 Page 
PTFA181001E/F
Confidential, Limited Internal Distribution
Revision History:
2009-02-20
Previous Version:
2006-04-14, Data Sheet
Page
Subjects (major changes since last revision)
1, 2, 9, 10
Update to product V4, with new package technologies. Update package outline diagrams.
8 Fixed typing error
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 02.1, 2009-02-20
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet PTFA181001F.PDF ] | |
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