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PDF PTFA181001GL Data sheet ( Hoja de datos )
| Número de pieza | PTFA181001GL | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon Technologies | |
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Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1805 – 1880 MHz
www.DataSheet4U.net
Description
The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs
designed for EDGE and WCDMA power amplifier applications in the
1805 to 1880 MHz band. Features include input and output matching,
and thermally-enhanced open-cavity packages with copper flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA181001GL*
Package PG-63248-2
PTFA181001HL*
Package PG-64248-2
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing
-30 35
-35 Efficiency 30
-40 IM3
-45
ACPR
25
20
15
-50 10
-55
34
36 38 40 42 44
Average Output Power (dBm)
5
46
Features
• Thermally-enhanced, plastic open-cavity
(EPOC™) packages with copper flanges, Pb-free
and RoHS compliant
• Broadband internal matching
• Typical EDGE performance at 1879.8 MHz, 28 V
- Average output power = 45 W
- Linear Gain = 16.5 dB
- Efficiency = 36%
- EVM RMS = 1.8%
• Typical CW performance, 1880 MHz, 28 V
- Output power at P–1dB = 120 W
- Gain 15.5 dB
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability
• Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 45 W (AVG), ƒ = 1879.8 MHz
Characteristic
Symbol Min Typ Max Unit
Error Vector Magnitude
RMS EVM
—
1.8
—
%
Modulation Spectrum @ 400 KHz
ACPR
— –61
—
dBc
Modulation Spectrum @ 600 KHz
ACPR
— –73
—
dBc
Gain
Drain Efficiency
Gps
— 16.5
—
dB
ηD
— 36
—
%
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Preliminary Data Sheet
1 of 11
Rev. 01, 2008-06-15
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz
18 65
17
Gain
16
55
45
15 35
14
Efficiency
13
25
15
12 5
36 38 40 42 44 46 48 50 52
Output Power (dBm)
IS-95 CDMA Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz
TCASE = 25°C
40 TCASE = 90°C
-10
35
Efficiency
-20
30
25
ACP FC – 0.75 MHz
20
15
10
-30
-40
-50
-60
5 ACPR FC + 1.98 MHz -70
0 -80
33 35 37 39 41 43 45 47
Output Power (dBm), Avg.
Preliminary PTFA181001GL
PTFA181001HL
Output Power (at 1 dB Compression)
vs. Supply Voltage
IDQ = 750 mA, ƒ =1880 MHz
52.0
51.5
51.0
50.5
50.0
49.5
24
26 28 30
Supply Voltage (V)
32
Preliminary Data Sheet
5 of 11
Rev. 01, 2008-06-16
5 Page 
Preliminary PTFA181001GL/HL
Confidential, Limited Internal Distribution
Revision History:
2008-06-15
Previous Version:
none
Page
Subjects (major changes since last revision)
3-24-06
Updated Sales Tbl style for 2 lines. Update Imprint. Change default date/s.
4-10 to 14
Refine existing frames, new frames for final page. Misc updates.
PreliminaryData Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2008-06-15
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Preliminary Data Sheet
11 of 11
Rev. 01, 2008-06-15
11 Page | ||
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