PDF TPCF8103 Data sheet ( Hoja de datos )

Número de pieza	TPCF8103
Descripción	Notebook PC Applications
Fabricantes	Toshiba Semiconductor
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No Preview Available ! TPCF8103 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 4.7S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) • Enhancement-model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -20 -20 ±8 -2.7 -10.8 2.5 0.7 1.2 -1.35 0.25 150 -55~150 Unit V V V A W W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2-3U1A Weight: 0.011 g (typ.) Circuit Configuration 8765 1234 Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. 1 2006-11-16 1 page RDS (ON) – Ta 300 Common source ID = −1.4 A Pulse test 250 VGS = −1.8 V 200 150 ID = −2.7 A −0.7 A ID = −1.4 A −0.7 A 100 −2.5 V 50 −4.5 V ID = −0.7, −1.4, −2.7 A 0 −80 −40 0 40 80 120 Ambient temperature Ta (°C) 160 TPCF8103 www.DataSheet4U.com −100 Common source Ta = 25°C Pulse test IDR – VDS −4.5 −10 −2.5 −1.8 −1 VGS = 0 V −1 0 0.4 0.8 1.2 1.6 2.0 Drain-source voltage VDS (V) Capacitance – VDS 10000 Common source VGS = 0 V f = 1 MHz Ta = 25°C 1000 Ciss 100 Coss Crss 10 −0.1 −1 −10 Drain-source voltage VDS (V) −100 −2.0 Common source VDS = −10 V ID = −200 μA Pulse test −1.5 Vth – Ta −1.0 −0.5 −0.0 −80 −40 0 40 80 120 Ambient temperature Ta (°C) 160 3 (1) t = 5 s 2.5 2 PD – Ta (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 1.5 (1) DC 1 (2) t = 5 s 0.5 (2) DC 0 0 40 80 120 Ambient temperature Ta (°C) 160 5 Dynamic input/output characteristics −20 −10 −16 −12 −8 −4 0 0 VDS −4 V −8 V −8 VDD = −16 V −6 VGS −4 Common source ID = −2.7 A Ta = 25°C Pulse test −2 −2 −4 −6 −8 Total gate charge Qg (nC) 0 −10 2006-11-16 5 Page

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