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PDF TPCF8101 Data sheet ( Hoja de datos )
| Número de pieza | TPCF8101 | |
| Descripción | Notebook PC Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCF8101
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8101
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −12 V)
• Enhancement model: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
−12
−12
±8
−6
−24
2.5
0.7
6.3
−3
0.25
150
−55~150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3U1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
50.0 °C/W
178.6 °C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Circuit Configuration
8765
1234
1 2006-11-16
1 page  
RDS (ON) – Ta
160
Common source
Pulse test
120
80
VGS = −1.8 V
ID = −2.5 A
40
−2.5 V
ID = −1.5 A
ID = −1.5 A
−6 A
−2.5 A
−4.5 V
0
−80 −40
0
ID = −1.5, −2.5, −6 A
40 80 120 160
Ambient temperature Ta (°C)
TPCF8101
www.DataSheet4U.com
−100
Common source
Ta = 25°C
Pulse test
IDR – VDS
−2.5 V
−10 −4.5 V
−1.8 V
−1 V
VGS = 0 V
−1
0 0.4 0.8 1.2 1.6 2.0
Drain-source voltage VDS (V)
10000
VGS = 0 V
f = 1 MHz
Ta = 25°C
Capacitance – VDS
Ciss
1000
Coss
Crss
100
10
−0.1
−1 −10
Drain-source voltage VDS (V)
−100
−2.0 Common source
VDS = −10 V
ID = −200 μA
Pulse test
−1.5
Vth – Ta
−1.0
−0.5
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
3
(1) t = 5 s
2.5
2
PD – Ta
(1) Device mounted on a
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
1.5
(1) DC
1
(2) t = 5 s
0.5 (2) DC
0
0 40 80 120
Ambient temperature Ta (°C)
160
Dynamic input/output characteristics
−20 −20
Common source
ID = −6 A
−16
Ta = 25°C
−16
Pulse test
−12 −12
−8
VDS
−4
−2.5 V
VGS
VDD = −10 V
−5 V
−8
−4
00
0 8 16 24 32 40
Total gate charge Qg (nC)
5 2006-11-16
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCF8101.PDF ] | |
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