PDF TPCA8105 Data sheet ( Hoja de datos )

Número de pieza	TPCA8105
Descripción	Notebook PC Applications
Fabricantes	Toshiba Semiconductor
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No Preview Available ! TPCA8105 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Portable Equipment Applications • Small footprint due to compact and slim package • Low drain-source ON resistance : RDS (ON) = 23 mΩ (typ.) • High forward transfer admittance :\|Yfs\| = 14 S (typ.) • Low leakage current : IDSS = −10 µA (VDS = −12 V) • Enhancement mode : Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA ) 0.5±0.1 1.27 8 0 .4 ± 0 .1 5 Unit: mm 0.05 M A 0 .1 5 ± 0 .0 5 0 .9 5 ± 0 .0 5 14 5.0±0.2 0.595 A 0 .1 6 6 ± 0 .0 5 S 0.05 S 1 4 1.1±0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current Pulse (Note 1) (Note 1) Drain power dissipation (Tc = 25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25°C) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating −12 −12 ±8 −6 −24 20 2.8 1.6 25.1 −6 0.8 150 −55~150 Unit V V V A W mJ A mJ °C °C 4 .2 5 ± 0 .2 8 5 0.8±0.1 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A Weight: 0.076 g (typ.) Circuit Configuration 8765 1234 Note: For (Note 1), (Note 2), (Note 3), (Note 4), refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with caution. 1 2006-11-17 1 page RDS (ON) – Tc 160 Common source Pulse test 120 80 VGS = −1.8 V ID = −2.5 A 40 −2.5 V ID = −1.5 A ID = −1.5 A −6 A −2.5 A −4.5 V 0 −80 −40 0 ID = −1.5, −2.5, −6 A 40 80 120 160 Case temperature Tc (°C) 10000 Capacitance – VDS VGS = 0 V f = 1 MHz Ta = 25°C Ciss 1000 Coss Crss 100 10 −0.1 −1 −10 −100 Drain−source voltage VDS (V) TPCA8105 www.DataSheet4U.com −100 −10 IDR – VDS −4.5 −2.5 −1.8 −1 Common source Ta = 25°C Pulse test VGS = 0 V −1 0 0.4 0.8 1.2 1.6 2.0 Drain−source voltage VDS (V) −2.0 Common source VDS = −10 V ID = −200 µA Pulse test −1.5 Vth – Ta −1.0 −0.5 0 −80 −40 0 40 80 120 160 Case temperature Tc (°C) Dynamic input/output characteristics −20 −20 Common source ID = −6 A −16 Ta = 25°C −16 Pulse test −12 −12 −8 VDS −4 −2.5 V VGS VDD = −10 V −5 V −8 −4 00 0 8 16 24 32 40 Total gate charge Qg (nC) 5 2006-11-17 5 Page

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