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PDF TPCA8102 Data sheet ( Hoja de datos )
| Número de pieza | TPCA8102 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCA8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
TPCA8102
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
1.27 0.4±0.1
85
0.05 M A
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.)
• High forward transfer admittance: |Yfs| = 60S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
−30
−30
±20
− 40
−120
45
2.8
1.6
208
− 40
4.5
150
−55 to 150
Unit
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
0.15±0.05
14
5.0±0.2
0.595
A
0.05 S
S
1
4
4.25±0.2
8 5 0.8±0.1
1,2,3：SOURCE
4：GATE
5,6,7,8：DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.076 g (typ.)
Circuit Configuration
8765
1234
1 2003-08-29
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TPCA8102.PDF ] | |
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