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Número de pieza | AOB418 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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AOB418
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB418 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOB418 is Pb-free (meets ROHS
& Sony 259 specifications). AOB418L is a Green
Product ordering option. AOv and AOB418L are
electrically identical.
Features
VDS (V) = 30V
ID = 110A (VGS = 10V)
RDS(ON) < 6mΩ (VGS = 10V)
RDS(ON) < 7.2mΩ (VGS = 4.5V)
TO-263
D2-PAK
Top View
Drain Connected
to Tab
GD S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current B,G
TA=25°C G
TA=100°C B
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
110
68
200
40
220
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
8.1
33
0.84
Max
12
40
1.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1 page AOB418
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 120
TA=25°C
100 100
80 80
60
40
tA
=
L⋅ ID
BV − VDD
60
40
20 20
0
0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
120
100
80
60
40
20
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
Alpha & Omega Semiconductor, Ltd.
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AOB418.PDF ] |
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