|
|
PDF AOB416 Data sheet ( Hoja de datos )
| Número de pieza | AOB416 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AOB416 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
AOB416
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB416 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. Standard Product AOB416 is Pb-
free (meets ROHS & Sony 259 specifications).
AOB416L is a Green Product ordering option.
AOB416 and AOB416L are electrically identical.
Features
VDS (V) = 30V
ID = 110A (VGS = 10V)
RDS(ON) < 4.5mΩ (VGS = 10V) @ 30A
RDS(ON) < 6.5mΩ (VGS = 4.5V) @ 30A
TO-263
D2-PAK
D
Top View
Drain Connected
to Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current B,G
TC=25°C G
TC=100°C B
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
110
78
200
30
140
100
50
3.1
2
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
8.1
33
0.84
Max
12
40
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOB416
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 120
TA=25°C
100 100
80 80
60
40
tA
=
L ⋅ ID
BV − VDD
60
40
20 20
0
0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
120
100
80
60
40
20
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOB416.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AOB414 | N-Channel Enhancement Mode Field Effect Transistor |  ETC |
| AOB416 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
| AOB418 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
| AOB4184 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |