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PDF TPCP8101 Data sheet ( Hoja de datos )
| Número de pieza | TPCP8101 | |
| Descripción | Field Effect Transistor Silicon MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCP8101
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOwwSwII.DI)ataSheet4U.com
TPCP8101
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 24 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: IDSS = -10 μA (max) (VDS = -20 V)
• Enhancement model: Vth = -0.5 to -1.2 V
(VDS = -10 V, ID = -200 μA)
Absolute Maximum Ratings (Ta = 25°C)
0.33±0.05
0.05 M A
85
Unit: mm
0.475
1
0.65
2.9±0.1
4
S
0.025 S
0.17±0.02
B 0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
Characteristic
Symbol
Rating
Unit
1.12+-00..1123
Drain-source voltage
VDSS -20 V
1.12+-00..1123
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
-20
±8
-5.6
-22.4
1.68
0.84
20.3
-5.6
0.168
150
-55~150
V
V
A
W
W
mJ
A
mJ
°C
°C
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
0.28
+0.1
-0.11
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3V1K
Weight: 0.017 g (typ.)
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
876
5
Marking (Note 5)
8 76
5
1 2 34
1
8101
※
1 2 34
Lot No.
2006-11-17
1 page  
RDS (ON) – Ta
160
Common source
Pulse test
120
80
VGS = −1.8 V
40 −2.5 V
−2.8 A
ID = −1.4 A
−5.6 A
ID = −1.4, −2.8 A
−4.5 V
0
−80 −40
0
ID = −1.4, −2.8, −5.6 A
40 80 120
Ambient temperature Ta (°C)
160
TPCP8101
www.DataSheet4U.com
−100
Common source
Ta = 25°C
Pulse test
IDR – VDS
−2.0 V
−10 −4 V
−1.8 V
−1 V
VGS = 0 V
−1
0 0.4 0.8 1.2 1.6 2
Drain−source voltage VDS (V)
10000
VGS = 0 V
f = 1 MHz
Ta = 25°C
1000
100
C – VDS
Ciss
Coss
Crss
10
0.1 1.0 10 100
Drain−source voltage VDS (V)
2.0
(1) t = 5 s
1.5
1.0 (1) DC
(2) t = 5 s
0.5 (2) DC
PD – Ta
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
0
0 40 80 120 160
Ambient temperature Ta (°C)
2.0
Common source
VDS = −10 V
ID = −200 μA
Pulse test
1.5
Vth – Ta
1.0
0.5
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
−20
VDS
−16
Dynamic input/output
characteristics
Common source
ID = −5.6 A
Ta = 25°C
Pulse test
−20
−16
−12 −12
VGS
−8 −8
−4 V
VDD = −16 V
−4 −4
−8 V
00
0 8 16 24 32 40
Total gate charge Qg (nC)
5 2006-11-17
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCP8101.PDF ] | |
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