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Número de pieza | TPCP8006 | |
Descripción | Field Effect Transistor Silicon MOS Type | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOwwSwI.VD)ataSheet4U.com
TPCP8006
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.)
• High forward transfer admittance:|Yfs| = 36 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
DC
Drain current
Pulse
(Note 1)
(Note 1)
Drain power dissipation (t = 5 s)
(Note 2a)
Drain power dissipation (t = 5 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
20
20
±12
9.1
36.4
1.68
0.84
21.5
9.1
0.168
150
−55 to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
0.33 ± 0.05
0.05 M A
85
Unit: mm
0.475 1
4
0.65
2.9 ± 0.1
B 0.05 M B
A
S
0.025 S
0.17 ± 0.02
0.8 ± 0.05
0.28
+0.1
-0.11
1.12
+0.13
-0.12
1.12
+0.13
-0.12
0.28
+0.1
-0.11
1,2,3 :SOURCE
4 :GATE
5,6,7,8:DRAIN
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3V1K
Weight: 0.017g(typ.)
Circuit Configuration
8765
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e.operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
123
Marking (Note 5)
876
4
5
8006
*
1234
Lot No.
1 2008-10-22
1 page RDS (ON) – Ta
20
Common source
Pulse test
16
ID = 2.3,4.5,9.1 A
12
VGS = 2.5 V
8
4.5 V
4
ID = 2.3,4.5,9.1 A
0
−80 −40
0
40
80 120 160
Ambient temperature Ta (°C)
TPCP8006
www.DataSheet4U.com
100
5
10
3
IDR – VDS
Common source
Ta = 25°C
Pulse test
1 VGS = −1 V
0
1
0.1
0
−0.2
−0.4 −0.6 −0.8
−1 −1.2
Drain−source voltage VDS (V)
10000
C – VDS
1000
Ciss
Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
0.01
0.1
Crss
1 10
Drain−source voltage VDS (V)
100
Vth – Ta
2
1.6
1.2
0.8
Common source
0.4 VDS = 10 V
ID = 1mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2.0
(1)
1.5
PD – Ta
(1) Device mounted on a glass-epoxy
board (a)(Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t=5s
1
(2)
0.5
0
0
40 80
120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
24 Common source
ID = 9.1 A
Ta = 25°C
Single Pulse test
18
VDS
VGS
8V
12
4 V VDD = 16 V
6
12
9
6
3
00
0 10 20 30 40
Total gate charge Qg (nC)
5 2008-10-22
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TPCP8006.PDF ] |
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