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PDF TPCP8001-H Data sheet ( Hoja de datos )
| Número de pieza | TPCP8001-H | |
| Descripción | Field Effect Transistor Silicon MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCP8001-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High spwewedw.UDa-MtaOShSeeIItI4)U.com
TPCP8001-H
High Efficiency DC／DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
0.33±0.05
0.05 M A
85
Unit: mm
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW = 3.6 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 13 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 16 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
7.2
28.8
1.68
0.84
33.6
7.2
0.066
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note: For Notes 1 to 5, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
0.475
1
0.65
2.9±0.1
4
S
0.025 S
0.17±0.02
B 0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12+-00..1132
1.12+-00..1132
1．Source
2．Source
3．Source
4．Gate
5．Drain
6．Drain
7．Drain
8．Drain
JEDEC
JEITA
0.28
+0.1
-0.11
―
―
TOSHIBA
2-3V1K
Weight: 0.017 g (typ.)
Circuit Configuration
8765
1234
Marking (Note 5)
876
5
8001H
※
1234
Lot No.
1 2006-05-29
1 page  
RDS (ON) – Ta
40 Common source
Pulse test
35
30 ID = 1.8,3.6,7.2 A
25
20 VGS = 4.5 V
15 ID = 1.8,3.6,7.2 A
10 10 V
5
0
−80
−40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCP8001-H
www.DataSheet4U.com
100 Common source
Ta = 25°C
Pulse test
IDR – VDS
10
3
10
4.5
1
VGS = 0 V
1
0
−0.2
−0.4
−0.6
−0.8
−1.0 −1.2
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
100 Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
10
Drain-source voltage VDS (V)
100
Vth – Ta
2.5
2.0
1.5
1.0
Common source
0.5 VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0 40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1)Device mounted on a glass-epoxy
board (a) (Note 2a)
(2)Device mounted on a glass-epoxy
board (b) (Note 2b)
ｔ＝5s
0.4
0
0 50 100 150 200
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50
Common source
ID = 7.2 A
Ta = 25°C
40 Pulse test
30
VDS
20
VDD = 6 V
12 V
24 V
20
16
12
8
10 4
00
0 4 8 12 16 20
Total gate charge Qg (nC)
5 2006-05-29
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCP8001-H.PDF ] | |
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