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PDF 2SD965 Data sheet ( Hoja de datos )
| Número de pieza | 2SD965 | |
| Descripción | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SD965
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use as AF output amplifier and flash unit.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
40
20
7
5
750
+150
-55 to +150
Unit
V
V
V
A
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO 40
Collector-Emitter Breakdown Voltage BVCEO 20
Emitter-Base Breakdown Volatge
BVEBO
7
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage(1) VCE(sat)
-
-
DC Current Gain(1)
hFE1
hFE2
230
150
Transition Frequency
fT -
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
-
-
-
-
0.35
-
-
150
-
Max
-
-
-
0.1
0.1
1
800
-
-
50
Unit
V
V
V
µA
µA
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=10V, IE=0
VEB=7V, IC=0
IC=3A, IB=100mA
IC=0.5A, VCE=2V
IC=2A, VCE=2V
IE=50mA, VCE=6V
VCB=20V, f=1MHz, IE=0
Classification of hFE1
Rank
Q
R
Range
230~380
340~600
S
560~800
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD965.PDF ] | |
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