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PDF 2SD965 Data sheet ( Hoja de datos )
| Número de pieza | 2SD965 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification
For stroboscope
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Satisfactory operation performances at high efficiency with the
low-voltage power supply.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
40
20
7
8
5
0.75
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
IEBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
fT
Cob
Conditions
VCB = 10V, IE = 0
VCE = 10V, IB = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 0.5A*2
VCE = 2V, IC = 2A*2
IC = 3A, IB = 0.1A*2
VCB = 6V, IE = –50mA, f = 200MHz
VCB = 20V, IE = 0, f = 1MHz
min
20
7
230
150
*1hFE1 Rank classification
Rank
Q
R
hFE1 230 ~ 380 340 ~ 600
typ max Unit
0.1 µA
1.0 µA
0.1 µA
V
V
600
1V
150 MHz
50 pF
*2 Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD965.PDF ] | |
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