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PDF 2SD965 Data sheet ( Hoja de datos )
| Número de pieza | 2SD965 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Guangdong Kexin Industrial | |
| Logotipo |  |
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TransistIoCrs
Silicon NPN epitaxial planar type
2SD965
Features
Low collector-emitter saturation voltage VCE(sat)
Satisfactory operation performances at high efficiency with
the lowvoltage power supply.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
40
20
7
5
8
0.75
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Collector-emitter cutoff current
Emitter-base cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
hFE Classification
Marking
hFE
Q
230 380
R
340 600
Symbol
Testconditons
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 10 V, IE = 0
ICEO VCE = 10 V, IB = 0
IEBO VEB = 7V, IC = 0
VCE = 2 V, IC = 0.5 A
hFE
VCE = 2 V, IC = 2A
VCE(sat) IC = 3A, IB = 0.1 A
Cob VCB = 20 V, IE = 0, f = 1 MHz
fT VCB = 6 V, IE = -50 mA, f = 200 MHz
Min Typ Max Unit
20 V
7V
0.1 A
1A
0.1 A
230 600
150
1V
50 pF
150 MHz
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD965.PDF ] | |
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