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PDF TPC8030 Data sheet ( Hoja de datos )
| Número de pieza | TPC8030 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8030
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8030
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 26 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
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Avalanche current
(Note 3)
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
± 25
11
44
1.9
1.0
31
11
0.053
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
Note: Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-09-29
1 page  
25
Common source
Pulse test
20
RDS (ON) – Ta
ID = 5.5,11 A
15 2.8
VGS = 4.5 V
10
5 VGS = 10 V
ID = 2.8,5.5,11 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8030
IDR – VDS
100
10
4.5 3
1
VGS = 0 V
10
Common source
Ta = 25°C
Pulse test
1
0
−0.2
−0.4 −0.6 −0.8
−1 −1.2
Drain−source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
10
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(V)
100
Vth – Ta
2.5
2
1.5
1
Common source
0.5 VDS = 10 V
ID = 1mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
3
2.5
2 (1)
PD – Ta
(1) Device mounted on a
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
t = 10 s
1.5
(2)
1
0.5
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50
Common source
ID = 11 A
Ta = 25°C
40 Pulse test
30
VDS
20
6
12
VDD =24 V
10 VGS
0
0 10 20 30
Total gate charge Qg (nC)
20
16
12
8
4
0
40
5 2009-09-29
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8030.PDF ] | |
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