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VBsemi TPC8030-VB
N, 30V, 12A, Rds(on), 12M¦¸@10V, 15M¦¸@4.5V, 20VGS(¡ÀV), 0.8~2.5VTH(V) , SOP8
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Datasheet TPC8030 Equivalent ( PDF ) - Transistor

P/N Descripción Fabr. PDF
TPC8030 Field Effect Transistor

TPC8030 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8030 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhanc
Toshiba Semiconductor Toshiba Semiconductor TPC8030 datasheet



TPC8 Datasheet ( Hoja de datos ) - Resultados que coinciden

P/N Descripción Fabr. PDF
TPC8001 Silicon N Channel MOS Type (MOSVI)
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TPC8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
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TPC8003 Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
Toshiba Semiconductor datasheet TPC8003 pdf
TPC8004 Silicon N Channel MOS Type (MOSVI)
Toshiba Semiconductor datasheet TPC8004 pdf
TPC8005-H Silicon N Channel MOS Type (High Speed U−MOS)
Toshiba Semiconductor datasheet TPC8005-H pdf
TP2412 Low Noise CMOS RRIO Op Amps
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TPC112S1 Low-Power, High-Performance DAC
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P/N Descripción Fabr. PDF
2N3904

NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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